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...current became a problem and alternate materials were necessary. These new materials had a lower equivalent oxide thickness so they could retain an appropriate The EOT definition is useful to quickly compare different [[dielectric]] materials to the industry standard silicon oxide dielectric, as: ...

...ctor]] material. It gets its name from the initials of the metal-insulator-semiconductor (MIS) structure. As with the MOS [[field-effect transistor]] structure, for ...organic MOS capacitor based on [[silicon]] and [[silicon dioxide]]. On the semiconductor substrate, a thin layer of oxide (silicon dioxide) is applied (by, for exam ...

...light detector device diagram.png|thumb|A diagram of a MSM light detector semiconductor-based device, image sourced from [[Special:BookSources/9789535117308|ISBN 9 ...put better. They usually follow a [[Metal-semiconductor-metal|MSM]] (Metal Semiconductor Metal) design pattern, usually following a metal "finger" with lines coming ...

In [[semiconductors]], the [[band gap]] of a [[semiconductor]] can be of two basic types, a '''direct band gap''' or an '''indirect band ...materials include [[crystalline silicon]] and [[Germanium|Ge]]. Some III–V materials are indirect bandgap as well, for example [[AlSb]]. ...

...rom the homogeneous part of the [[semiconductor Bloch equations]] or the [[semiconductor luminescence equations]]. ....</ref><ref name="klingshirn2012semiconductor">Klingshirn, C. F. (2006). ''Semiconductor Optics''. Springer. {{ISBN|978-3540383451}}.</ref> ...

...ctric]] dielectric material sandwiched between two electrically conducting materials.<ref name="a">{{cite journal |last1=Garcia |first1=Vincent |last2=Bibes |fi ...ent status and future prospect as a universal memory |journal=Frontiers in Materials |volume=10 |date=2023-09-28 |issn=2296-8016 |doi=10.3389/fmats.2023.1148979 ...

...f [[energy]], used to quantify energetic disorder in the band edges of a [[semiconductor]]. It is evaluated by fitting the [[Attenuation coefficient|absorption coef ...increases the further from the band gap. This means the absorbance of the semiconductor will increase with energy.]] ...

...100020570|bibcode=1938PCPS...34..568M |s2cid=222602877 }}</ref> The use of semiconductor junctions sparked the [[computer]] revolution in the second half of the 20t ...onductor work function; <math>\chi_s </math>, the electron affinity of the semiconductor.]] ...

...1-x)Sb, AlP, AlSb, GaP, GaSb, InP and their compounds (III-V semiconductor materials), along with Silicon Oxide. Applied and/or self-consistent electrostatic an ...substituted by Archimedes, making this one the GNU package for Monte Carlo semiconductor devices simulations.<ref>{{cite mailing list |last=Sellier |first=Jean Mich ...

{{Short description|How semiconductor lasers work}} ...be solved by development of appropriate theoretical models to describe the semiconductor optical gain and by comparison of the predictions of these models with expe ...

...into final products. The use of electroplasticity to improve processing of materials is known as electrically assisted manufacturing. ...fect [[Electron|electrons]] which dictate the [[Chemical bond|bonding]] in materials and therefore all higher level phenomena such as dislocation motion, flow s ...

The '''semiconductor [[Felix Bloch|Bloch]] equations'''<ref name="Lindberg88"> Schäfer, W.; Wegener, M. (2002). ''Semiconductor Optics and Transport Phenomena''. Springer. {{ISBN|3540616144}}. ...

...isplacement sensors are used in a wide variety of applications including [[semiconductor]] processing, assembly of precision equipment such as [[disk drive]]s, prec ...onductive materials. The other type measures thicknesses of non conductive materials or the level of a fluid. ...

...ique used to analyze [[resistivity]] versus depth in [[semiconductor]]s. [[Semiconductor device]]s depend on the distribution of carriers ([[electron]]s or [[electr ...ASTM ATP 960, D. C. Gupta and P. H. Langer, Eds., Am. Soc. for Testing and Materials (1986).</ref> and Casel and Jorke.<ref>A. Casel and H. Jorke, Appl. Phys. L ...

...T amplifier is the '''MOSFET amplifier''', which uses [[MOSFET|metal–oxide–semiconductor FETs]] (MOSFETs). The main advantage of a FET used for amplification is tha ...emonstrated |url=https://www.computerhistory.org/siliconengine/metal-oxide-semiconductor-mos-transistor-demonstrated/ |journal=The Silicon Engine: A Timeline of Sem ...

...| last2 = Zettler | first2 = J.-T. | title = Real-time analysis of III--V-semiconductor epitaxial growth | journal = Applied Surface Science | volume = 100--101 | [[Category:Materials science]] ...

...687}}</ref> The technique studies the transient [[photoconductivity]] of a semiconductor sample during or after it is illuminated by a light pulse. Electron–hole pa ...4-07 |url=https://onlinelibrary.wiley.com/doi/10.1002/0471749095.ch7 |work=Semiconductor Material and Device Characterization |pages=389–464 |access-date=2023-03-19 ...

...G.]]; Gibbs, H. M. (2006). "Semiconductor excitons in new light". ''Nature Materials'' '''5''' (7): 523–531. [[Digital object identifier|doi]]:[https://dx.doi.o ...aspects of laser pulses propagating through matter such as [[atom]]s or [[semiconductor]]s. In quantum-optical spectroscopy, one additionally utilizes the [[Quantu ...

...ic deformation. In addition, [[dislocations]] in low stacking-fault energy materials typically dissociate into an ''extended dislocation'', which is a stacking ...ng faults are two dimensional planar defects that can occur in crystalline materials. They can be formed during crystal growth, during plastic deformation as pa ...

...orm a [[valence bond]], which locks them in place. However, with [[Doping (semiconductor)|doping]], these electrons can act as mobile [[Cooper pairs]] and are able ...ing that fractional particles can happen in quasi two-dimensional magnetic materials, was found by EPFL scientists<ref>{{Cite journal|title = Fractional excitat ...