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  • '''Direct bonding''', or '''fusion bonding''', is a [[wafer bonding]] process without any additional intermediate layers. It is based on chemic These requirements are specified for the wafer surface as sufficiently clean, flat and smooth. Otherwise unbonded areas so ...
    16 KB (2,317 words) - 19:44, 30 December 2024
  • ...nness or [[Impurity|impurities]]. The bond connection is characterized for wafer bond development or quality assessment of fabricated wafers and sensors. ...ameters: bond strength, [[Hermetic seal|hermeticity]] of encapsulation and bonding induced stress.<ref name="KGH+2010" /> ...
    25 KB (3,565 words) - 21:08, 30 December 2024
  • ...include: bulk micro-machining, surface micro-machining, [[LIGA]], [[wafer bonding]], etc. * Wax/[[Parylene]] bonding<ref>{{cite journal|last=Arnold |first=D.|author2=B. Bowers |author3=N. Wang ...
    12 KB (1,773 words) - 14:11, 18 December 2024
  • ...llows definition of the vertical pump design parameters. Additionally, the bonding layer might be affected by the pumped medium. ...
    33 KB (4,510 words) - 06:22, 28 November 2024
  • SHJ cells generally consist of an active [[crystalline silicon]] absorber [[Wafer (electronics)|substrate]] which is passivated by a thin layer of hydrogenat ...con thin film heterojunction structure.png|thumb|A monocrystalline silicon wafer coated with a thin film of amorphous silicon (not visible). Such an amorpho ...
    131 KB (17,895 words) - 23:08, 11 February 2025
  • Because of the strong covalent carbon–carbon bonding in the sp<sup>2</sup> configuration, carbon nanotubes are chemically inert Arrays of top-gated CNTFETs can be fabricated on the same wafer, since the gate contacts are electrically isolated from each other, unlike ...
    36 KB (5,341 words) - 03:32, 6 April 2024
  • * The development of frame-to-hull bonding methods in GRP ships. The project enabled the construction of {{HMS|Wilton * Applied Microengineering Limited. In-situ aligned wafer bonding machines and services<ref name="N056"/> ...
    56 KB (8,082 words) - 16:35, 25 December 2024
  • ...on (phase transition)|sublime]]. The gaseous elements then condense on the wafer where they react with each other to form [[single crystal]]s. Due to the weak van der Waals bonding, which relaxes the lattice-matching condition, TI can be grown on a wide va ...
    62 KB (8,402 words) - 18:04, 28 February 2025
  • ...me of solid phases, which have both [[Electronics|electronic]] and [[Ionic bonding|ionic]] [[conductivities]]. In electrochemical supercapacitors, the charge ...to the tape, the tape is positioned on a clean substrate such as a silicon wafer or film. The tape with the graphene is pressed gently onto the substrate to ...
    193 KB (26,129 words) - 18:43, 26 February 2025
  • ...D counterparts due to a shift from covalent/ionic bonding to van der waals bonding.<ref name="auto6"/> Furthermore, increasing the number of subunits “n” from ...for medium scale manufacturing, for instance, for standalone modules or Si wafer-scale integration. This work shows that through judicious selection of a gr ...
    222 KB (30,598 words) - 03:29, 28 February 2025