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...esulting free carrier scattering are harmful problems in [[semiconductor]] devices which operate based on the nonlinear optical interactions such as the [[Ker ...first1=Bahram|last2=Fathpour|first2=Sasan|date=December 2006|title=Silicon Photonics|journal=Journal of Lightwave Technology|volume=24|issue=12|pages=4600–4615| ...

...ool for the modelling linear effects in fiber optics and silicon photonics devices. * It is an excellent technique to model long devices or devices composed of metals. ...

...|first1=David A.B. |title=Device Requirements for Optical Interconnects to Silicon Chips |journal=Proceedings of the IEEE |date=2009 |volume=97 |issue=7 |page ...ef>{{cite book |last1=Chuang |first1=Shun Lien |title=Physics of Photonics Devices, Chapter 3 |date=2009 |publisher=Wiley |isbn=978-0470293195}}</ref> ...

...r carriers.<ref name="ref8" /> The three current methods of fabricating IB devices are described below. .../GaAs, have been able to do this.<ref name="ref9" /> Preliminary InAs/GaAs devices have been able to produce efficiencies as high as 18.3%, although this is s ...

...ns, better [[contrast ratio]]s and less distortion. For these reasons, RCE devices can be expected to play a growing role in [[optoelectronics|optical electro ...han compared to conventional [[photodiode]]s. The formulation of η for RCE devices gives insight to the design criteria. ...

...ref name=":02">{{Cite book|last1=Saleh|first1=B.E.A.|title=Fundamentals of Photonics|last2=Teich|first2=M.C.|publisher=Wiley|year=2019|isbn=978-1-119-50687-4|lo Traditional MOSFETs, constructed with a silicon dioxide layer on top of a silicon substrate, operate by creating a biased ''[[P–n junction|p-n junction]]'', ...

...nterconnects : silicon electrooptic modulators, slowlight & optomechanical devices ...= [[Beyond CMOS]] <br /> [[Magneto-Electric Spin-Orbit]] <br /> [[Silicon photonics]] <br /> [[Spintronics]] <br /> [[In-memory processing]] <br /> [[Quantum m ...

...o electricity (337 W/m²). The most popular solar cell material, silicon, has a less favorable band gap of 1.1 eV, resulting in a maximum efficiency ...on]], where charge carriers are depleted on each side of the interface. In silicon, this transfer of electrons produces a [[potential barrier]] of about 0.6 [ ...

...elov|first3=K. S.|s2cid=119285513|title=Graphene plasmonics|journal=Nature Photonics|date=5 November 2012|volume=6|issue=11|pages=749–58|doi=10.1038/nphoton.201 ...title=Photogating effect as a defect probe in hydrogenated nanocrystalline silicon solar cells|journal=Journal of Applied Physics|date=2010|volume=108|issue=1 ...

...15688 }}</ref> Nanophotonic resonators can be made with photonic crystals, silicon, diamond, or metals such as gold. ...ef name=Song2003>{{cite journal | last=Song | first=B.-S. | title=Photonic Devices Based on In-Plane Hetero Photonic Crystals | journal=Science | publisher=Am ...

...ther applications are [[photonic]] data storage, light generation, and bio-photonics.<ref name=nist-plasmo-mm/><ref name=berkely-grin/><ref name=w-barnes/><ref ...te a high-bandwidth, infrared-frequency plasmonic communications link on a silicon chip. ...

...st1=T |display-authors=etal |title=A sub-40-mHz-linewidth laser based on a silicon single-crystal optical cavity |doi=10.1038/nphoton.2012.217 |bibcode=2012Na [[Category:Optical devices]] ...

.... The electrical conductivity of Si, as described so far, called intrinsic silicon, is exceedingly small. Introducing impurities to the Si in the form of phos ===Invention and first devices=== ...

...l=https://opg.optica.org/abstract.cfm?URI=opn-30-10-28 |journal=Optics and Photonics News |language=en |volume=30 |issue=10 |pages=28 |doi=10.1364/OPN.30.10.000 Nowadays there are several application fields for microstructured devices, made by multiphoton polymerization, such as: [[regenerative medicine]], [[ ...

...nce.1102896 |pmid=15499015|s2cid= 5729649 }}</ref> in which they described devices "which contained just one, two, or three atomic layers" ...448055 }}</ref> Another group showed that the band gap of bilayer films on silicon carbide could be controlled by selectively adjusting the carrier concentrat ...

...alists | url=http://www.photonics.com/Article.aspx?AID=35970 | website=www.photonics.com|access-date=29 January 2015}}</ref>). In the last ten years, the compan ...marre |title=Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II |chapter=Evaluation of micrometer scale lateral fluctuations of transpor ...

...In Electronic Imaging'97 (pp. 13–24). International Society for Optics and Photonics.</ref><ref>Barghout-Stein, Lauren. On differences between peripheral and fo ===Conductance-based silicon neurons=== ...

...ahertz nano-spectroscopy with sub-cycle temporal resolution|journal=Nature Photonics|volume=8|issue=11|pages=841–845|doi=10.1038/nphoton.2014.225|arxiv=1604.043 ...nal| vauthors = Zhang LM |date=2012-01-01|title=Near-field spectroscopy of silicon dioxide thin films|journal=Physical Review B |volume=85 |issue=7 |pages=075 ...

...rometers with arbitrary designs for photonic boson sampling|journal=Nature Photonics|date=2013|volume=7|issue=7|pages=545–549|doi=10.1038/nphoton.2013.112|arxiv * three photons in different modes of a six-mode silica-on-silicon waveguide circuit, by a collaboration between Universities of Oxford, Shang ...

...Marichy |first3=Catherine |last4=Scheffold |first4=Frank |year=2014 |title=Silicon hyperuniform disordered photonic materials with a pronounced gap in the sho ...e=Hyperuniform disordered waveguides and devices for near infrared silicon photonics |journal=Scientific Reports |language=en |volume=9 |issue=1 |pages=20338 |i ...