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...y, or as the capacitance per unit width of minimum-length transistors in a technology. In generations of approximately [[Dennard scaling]] of [[MOSFET|metal-oxide-semiconductor FET]]s (MOSFETs), the capacitance per unit area has increased inversely wit ...

...wires, because such temperature increase may affect the normal behavior of semiconductor devices. ...last=Ogrenci-Memik|first=Seda|publisher=The Institution of Engineering and Technology|year=2015|isbn=9781849199353|location=London, United Kingdom|oclc=934678500 ...

...er channel.<ref>{{cite book|title=Academic Press Dictionary of Science and Technology|url=https://archive.org/details/academicpressdic00morr|url-access=registrat [[Category:Semiconductor devices]] ...

...n, lead time and variability in order to maximize performance within the [[semiconductor]] industry. ===Background Semiconductor industry=== ...

...le/133186/download Stochastic Signal Density Modulation Datasheet] Cypress Semiconductor (Jul 24, 2014)</ref> ...cypress.com/file/125321/download 16-Bit Hardware PrISM Datasheet ] Cypress Semiconductor (Mar 3, 2014)</ref> For a 4-bit LFSR the sequence is [1 2 5 3 7 6 4]. If t ...

*{{cite book | author=C. Hamaguchi | title=Basic Semiconductor Physics | publisher=Springer | year=2001 | pages= 196–253}} [[Category:Semiconductor technology]] ...

...d Technology]] |series=Modeling and Simulation in Science, Engineering and Technology |year=2004|pages=287–320|doi=10.1007/978-0-8176-8200-2_10|isbn=978-1-4612-6 ...journal |last1=Snoke |first1=D.W. |title=The quantum Boltzmann equation in semiconductor physics |journal=[[Annalen der Physik]] |year=2011 |volume=523 |issue=1–2 | ...

| genre = [[Technology CAD|TCAD]] ...xInxSb, AlxIn(1-x)Sb, AlP, AlSb, GaP, GaSb, InP and their compounds (III-V semiconductor materials), along with Silicon Oxide. Applied and/or self-consistent electr ...

...T amplifier is the '''MOSFET amplifier''', which uses [[MOSFET|metal–oxide–semiconductor FETs]] (MOSFETs). The main advantage of a FET used for amplification is tha ...emonstrated |url=https://www.computerhistory.org/siliconengine/metal-oxide-semiconductor-mos-transistor-demonstrated/ |journal=The Silicon Engine: A Timeline of Sem ...

...ique used to analyze [[resistivity]] versus depth in [[semiconductor]]s. [[Semiconductor device]]s depend on the distribution of carriers ([[electron]]s or [[electr ...3''', 1499 (1982)</ref> Albers,<ref>J. H. Albers, ''Emerging Semiconductor Technology'', ASTM ATP 960, D. C. Gupta and P. H. Langer, Eds., Am. Soc. for Testing a ...

...the [[Photoelectric sensor|photocell]] and many more play crucial roles in technology. ...onductor work function; <math>\chi_s </math>, the electron affinity of the semiconductor.]] ...

{{Short description|How semiconductor lasers work}} ...be solved by development of appropriate theoretical models to describe the semiconductor optical gain and by comparison of the predictions of these models with expe ...

...become instrumental in further shrinking the design nodes and topology of semiconductor transistor manufacturing. ...of Synopsys) around 1997.<ref name="TMA1997">{{Citation | title = Major US Semiconductor Maker Chooses TMA for OPC Software | newspaper = PRNewswire | date = 1997-1 ...

...e.g., the [[semiconductor Bloch equations]] (abbreviated as SBEs) or the [[semiconductor luminescence equations]] (abbreviated as SLEs). One of the most accurate theories of semiconductor [[absorption (electromagnetic radiation)|absorption]] and [[photoluminescen ...

...ook/9783319000015|title=Introduction to Thin Film Transistors: Physics and Technology of TFTs|date=2013|publisher=Springer International Publishing|isbn=978-3-31 ...increases the further from the band gap. This means the absorbance of the semiconductor will increase with energy.]] ...

...687}}</ref> The technique studies the transient [[photoconductivity]] of a semiconductor sample during or after it is illuminated by a light pulse. Electron–hole pa ...4-07 |url=https://onlinelibrary.wiley.com/doi/10.1002/0471749095.ch7 |work=Semiconductor Material and Device Characterization |pages=389–464 |access-date=2023-03-19 ...

..., S. W.; Kira, M.; [[Galina Khitrova|Khitrova, G.]]; Gibbs, H. M. (2006). "Semiconductor excitons in new light". ''Nature Materials'' '''5''' (7): 523–531. [[Digita ...aspects of laser pulses propagating through matter such as [[atom]]s or [[semiconductor]]s. In quantum-optical spectroscopy, one additionally utilizes the [[Quantu ...

...g'''&nbsp;''S_s-th'' which is usually given as:<ref>''Physics of Semiconductor Devices'', S. M. Sze. New York: Wiley, 3rd ed., with Kwok K. Ng, 2007, chap ...contacts and high density MIM capacitors | title = 2012 Symposium on VLSI Technology (VLSIT) | pages = 131 | year = 2012 | isbn = 978-1-4673-0847-2 ...

...ric tunnel junctions are being developed as a memristive component for the semiconductor industry. As of early 2024, FTJ based technologies are not commercially ava ...le fabrication temperatures, rendering FTJs especially interesting for the semiconductor industry.<ref name="c" /> ...

...for logic applications |date=2015 |publisher=[[Massachusetts Institute of Technology]] |hdl=1721.1/99777 |type=Thesis }}</ref> that takes advantage of [[quantum ...in a proprietary [[DMOS|double-diffused metal–oxide–semiconductor]] (DMOS) technology but which are not, in fact, quantum-based (the Q in this case standing for ...