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...ctor]] material. It gets its name from the initials of the metal-insulator-semiconductor (MIS) structure. As with the MOS [[field-effect transistor]] structure, for ...organic MOS capacitor based on [[silicon]] and [[silicon dioxide]]. On the semiconductor substrate, a thin layer of oxide (silicon dioxide) is applied (by, for exam ...

...lectrical junctions types include [[thermoelectricity]] junctions, [[metal–semiconductor junction]]s and [[p–n junction]]s. Junctions are either [[rectifying]] or n [[Category:Semiconductor structures]] ...

[[File:Lasers.jpeg|thumb|300px|Semiconductor lasers (520nm, 445nm, 635nm)]] [[File:Laser module.jpg|thumb|300px|Semiconductor lasers (660nm, 532nm, 405nm)]] ...

...bution of carriers ([[electron]]s or [[electron hole|holes]]) within their structures to provide the desired performance. The carrier concentration (which can va ...ever-shrinking dimensions of state-of-the-art digital devices. For shallow structures (<1&nbsp;um deep), the data reduction is complex. Some of the contributors ...

{{Short description|How semiconductor lasers work}} ...be solved by development of appropriate theoretical models to describe the semiconductor optical gain and by comparison of the predictions of these models with expe ...

...100020570|bibcode=1938PCPS...34..568M |s2cid=222602877 }}</ref> The use of semiconductor junctions sparked the [[computer]] revolution in the second half of the 20t ...onductor work function; <math>\chi_s </math>, the electron affinity of the semiconductor.]] ...

===Stress in semiconductor structures=== [[Stress (mechanics)|Stress]] in the [[semiconductor]] structure involving evaporated [[Thin film|thin films]] usually results f ...

In [[semiconductors]], the [[band gap]] of a [[semiconductor]] can be of two basic types, a '''direct band gap''' or an '''indirect band ...age:Indirect Bandgap.svg|thumb|350px|Energy vs. [[crystal momentum]] for a semiconductor with an indirect band gap, showing that an electron cannot shift from the ...

...f [[energy]], used to quantify energetic disorder in the band edges of a [[semiconductor]]. It is evaluated by fitting the [[Attenuation coefficient|absorption coef ...increases the further from the band gap. This means the absorbance of the semiconductor will increase with energy.]] ...

...m [[hexagonal close packed]] (hcp) structures only in stacking order: both structures have close-packed atomic planes with sixfold symmetry — the atoms form equi ...the band structure of the crystal that can affect the current transport in semiconductor devices. ...

...mission in semiconductors and they are suited for a systematic modeling of semiconductor emission ranging from [[exciton]]ic luminescence to [[laser]]s. ...|photon-correlation]] effects, distinct many-body states, as well as light–semiconductor [[Quantum entanglement|entanglement]]. Such investigations are the basis of ...

...1=Serge |editor-last2=Ye |editor-first2=Peide |title=Fundamentals of III-V Semiconductor MOSFETs |date=2010 |publisher=[[Springer Science & Business Media]] |isbn=9 ...ember 2015) which contain a proprietary [[DMOS|double-diffused metal–oxide–semiconductor]] (DMOS) technology but which are not, in fact, quantum-based (the Q in thi ...

{{Short description|Semiconductor diode based upon the p–n junction}} {{See also|p–n junction|Diode#Semiconductor diodes}} ...

...ory are introduced. Then, a few prominent examples for coherent effects in semiconductor optics are described all of which can be understood theoretically on the ba In solid state systems, such as semiconductors and semiconductor nanostructures, an adequate description of the many-body Coulomb interactio ...

...become instrumental in further shrinking the design nodes and topology of semiconductor transistor manufacturing. ...of Synopsys) around 1997.<ref name="TMA1997">{{Citation | title = Major US Semiconductor Maker Chooses TMA for OPC Software | newspaper = PRNewswire | date = 1997-1 ...

...of transistor. Even though its structure is very similar to a metal–oxide–semiconductor field-effect transistor ([[MOSFET]]), the fundamental switching mechanism d ...pe semiconductor|p-type]], [[Intrinsic semiconductor|intrinsic]], [[N-type semiconductor|n-type]]) junction, in which the electrostatic potential of the intrinsic r ...

title=Scattering-matrix treatment of patterned multilayer photonic structures| === Semiconductor interfaces === ...

The utility of photo-reflectance for characterization of [[semiconductor]] samples has been recognized since the late 1960s. In particular, ...or structures including the two-dimensional electron gas density | journal=Semiconductor Science and Technology | publisher=IOP Publishing | volume=8 | issue=8 | da ...

...involve multiple [[lithography]] steps and can be applied to [[metal]], [[semiconductor]] or [[oxide]] surfaces alike. ...g deposition by either passing [[direct current]] through the sample for [[semiconductor]]s or by driving current through a separate heating foil underneath the sub ...

The effect was first discovered and understood in [[semiconductor]] materials, but later research proved that [[metal]]s also exhibit electro ...d. This has the effect that the electric field can penetrate deeper into a semiconductor than into a metal. ...