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...st2 = J.-T. | title = Real-time analysis of III--V-semiconductor epitaxial growth | journal = Applied Surface Science | volume = 100--101 | pages = 465–477 | ...

...dowing (''ATLAS'')''' is a [[surface science]] technique which enables the growth of planar [[nanowire]] or [[nanodot]] arrays using [[molecular beam epitaxy ...involve multiple [[lithography]] steps and can be applied to [[metal]], [[semiconductor]] or [[oxide]] surfaces alike. ...

...sition]] technique used for the [[epitaxy|epitaxial]] deposition of thin [[semiconductor]] ([[silicon]], [[germanium]] and [[Silicon-germanium|SiGe alloys]]) films. ...ating highly reactive [[Radical (chemistry)|radicals]] which result in the growth of an epilayer on the substrate. Moreover, the bombardment of Ar ions remov ...

...As]]_1-x[[Antimony|Sb]]_x), is a ternary [[III-V|III-V semiconductor]] compound. It can be considered as an alloy between [[indium arsenide]] (I ...th conditions and maintaining relatively low temperatures during and after growth, it is possible to obtain compositions of InAsSb within the miscibility gap ...

{{Short description|Dynamical study of growth of a surface}} ...' refers to models used in the [[Dynamical system|dynamical]] study of the growth of a surface, usually by means of a [[stochastic differential equation]] of ...

...ed by gold-silicon droplet deposited on the wafer surface prior to whisker growth.]] ...dly adsorb a vapor to [[supersaturation]] levels, and from which [[crystal growth]] can subsequently occur from [[nucleation|nucleated]] seeds at the liquid– ...

...ric tunnel junctions are being developed as a memristive component for the semiconductor industry. As of early 2024, FTJ based technologies are not commercially ava ...le fabrication temperatures, rendering FTJs especially interesting for the semiconductor industry.<ref name="c" /> ...

...ed the [[stacking-fault energy]]. Stacking faults can arise during crystal growth or from plastic deformation. In addition, [[dislocations]] in low stacking- ...that can occur in crystalline materials. They can be formed during crystal growth, during plastic deformation as partial dislocations move as a result of dis ...

...5=A.|date=May 1987|title=Surface differential reflectivity spectroscopy of semiconductor surfaces|url=http://avs.scitation.org/doi/10.1116/1.574154|journal=Journal ...PhysRevB.79.125428|bibcode=2009PhRvB..79l5428L |issn=1098-0121}}</ref> the growth of heavy metals on semiconductors,<ref>{{Cite book|last1=Buchenko|first1=Vi ...

...ectromagnetic spectrum]]. They are fabricated from [[epitaxially]]-grown [[semiconductor]] heterostructures composed of layers of [[indium arsenide]] (InAs), [[gall ...re able to achieve lasing at much lower input powers than competing mid-IR semiconductor laser technologies.<ref name="VurgaftmanNatCom">{{cite journal |last=Vurgaf ...

...1=Serge |editor-last2=Ye |editor-first2=Peide |title=Fundamentals of III-V Semiconductor MOSFETs |date=2010 |publisher=[[Springer Science & Business Media]] |isbn=9 ...ember 2015) which contain a proprietary [[DMOS|double-diffused metal–oxide–semiconductor]] (DMOS) technology but which are not, in fact, quantum-based (the Q in thi ...

...adhesion is important for applications such as complementary metal oxide [[semiconductor]] devices. These devices make possible the high packing densities of modern ...d are either [[N-type semiconductor|n-type]] (extra electrons) or [[P-type semiconductor|p-type]] (extra electron holes). Although there are only two valence states ...

...ic [[Bloch's theorem|Bloch function]] for the energy band edge in the bulk semiconductor and <math>\phi_n(z)</math> is a slowly varying envelope function for the sy ...tive mass (solid-state physics)|effective mass]] of an electron in a given semiconductor. ...

...een studied in many materials systems including [[metal]], ceramics, and [[Semiconductor|semiconductors]]. Various mechanisms have been posited to explain electropl ...d reducing [[cavitation]], which can lead to premature fracture, and grain growth, which can prevent superplastic flow due to grain boundary sliding, in addi ...

...aked onto 1.0% Geltrite plates containing Allen's media during exponential growth.<ref name=":0" /> After incubation at 70&nbsp;°C, an isolated colony of ''M ==Growth and physiology== ...

[[File:Spinterface.png|thumb|Spinterface: [[organic semiconductor]] layer grown on a [[ferromagnetism|ferromagnet]] substrate]] ...ter)|interface]] between a [[ferromagnetism|ferromagnet]] and an [[organic semiconductor]]. ...

...technique has been extended to [[Boron group|III]]–[[Nitrogen group|V]] [[semiconductor]]s, [[silicon carbide]], [[metal]]s such as [[titanium]], tantalum, [[alumi ===Molecular template growth and preferential deposition=== ...

...and [[condensed matter physics]]. There are two processes involved in the growth of these nanocrystals. Firstly, volume [[Gibbs free energy]] of the system ...inimization of the volume free energy, and the thermodynamic regime, where growth is controlled by minimization of the surface free energy.<ref name=":1" /> ...

...wn as '''Frenkel–Poole emission'''<ref name="Sze">Sze, S. M., ''Physics of Semiconductor Devices'', 2nd edition, Section 4.3.4.</ref>) is a model describing the mec ...[[electrical conductivity]] <math>\sigma </math> of [[dielectrics]] and [[semiconductor]]s in presence of high electric fields (more than <math>10^5 V/cm</math> fo ...

...The decay network begins with ²³⁸Pu and proceeds through the in-growth of long-lived ²³⁴U, ²³⁰Th, and ²²⁶Ra. If a ...''T''₀ then there will be a linear relationship between the in-growth of ²³⁵U and time elapsed since purification. There are, however, ...