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...such temperature increase may affect the normal behavior of semiconductor devices. ...

...light detector device diagram.png|thumb|A diagram of a MSM light detector semiconductor-based device, image sourced from [[Special:BookSources/9789535117308|ISBN 9 ...put better. They usually follow a [[Metal-semiconductor-metal|MSM]] (Metal Semiconductor Metal) design pattern, usually following a metal "finger" with lines coming ...

...te]] [[semiconductor device]], constructed by creating two [[field effect (semiconductor)|field-effect]] channels back-to-back, with a junction between. It is a fou *[[Multigate device]], other multi-gate devices ...

...ctor]] material. It gets its name from the initials of the metal-insulator-semiconductor (MIS) structure. As with the MOS [[field-effect transistor]] structure, for ...organic MOS capacitor based on [[silicon]] and [[silicon dioxide]]. On the semiconductor substrate, a thin layer of oxide (silicon dioxide) is applied (by, for exam ...

...ween a [[Gate (transistor)|gate]] and a [[doping (semiconductor)|doped]] [[semiconductor|semiconducting]] region. Device performance has typically been improved by ...nd more recently [[aluminum oxide]] for [[multigate device|gate-all-around devices]]. ...

...le/133186/download Stochastic Signal Density Modulation Datasheet] Cypress Semiconductor (Jul 24, 2014)</ref> ...cypress.com/file/125321/download 16-Bit Hardware PrISM Datasheet ] Cypress Semiconductor (Mar 3, 2014)</ref> For a 4-bit LFSR the sequence is [1 2 5 3 7 6 4]. If t ...

...>{{cite book |author1=A. P. Godse |author2=U. A. Bakshi |title=Solid State Devices And Circuits |date=2009 |publisher=Technical Publications |isbn=97881843166 [[Category:Semiconductor technology]] ...

In electronics and [[semiconductor]] physics, the '''law of mass action''' relates the concentrations of [[val ...st = S | first = Salivahanan |author2=N. Suresh Kumar | title = Electronic Devices & Circuits | publisher = Tata McGraw Hill Education Pvt Ltd | year = 2011 | ...

...xInxSb, AlxIn(1-x)Sb, AlP, AlSb, GaP, GaSb, InP and their compounds (III-V semiconductor materials), along with Silicon Oxide. Applied and/or self-consistent electr ...Archimedes, making this one the GNU package for Monte Carlo semiconductor devices simulations.<ref>{{cite mailing list |last=Sellier |first=Jean Michel |titl ...

{{Short description|Type of semiconductor current}} ...s occurring because of non-uniform concentration of charged particles in a semiconductor. The drift current, by contrast, is due to the motion of charge carriers d ...

...T amplifier is the '''MOSFET amplifier''', which uses [[MOSFET|metal–oxide–semiconductor FETs]] (MOSFETs). The main advantage of a FET used for amplification is tha |title=Electronic Devices ...

...ast2=Lee|first2=L.|last3=Donne|first3=S. W.|title=Flat-Band Potential of a Semiconductor: Using the Mott–Schottky Equation|journal=Journal of Chemical Education|vol ...rgy of electrolyte, E_redox, a Schottky barrier is formed at the semiconductor/electrolyte interface. The vertical size of the barrier in the energy diagr ...

...force]] over a given distance. When an electric field is applied across a semiconductor material, a current is produced due to the flow of charge carriers. ...commonly used in the context of electrons and [[electron hole|holes]] in [[semiconductor]]s, although the same concept also applies to metals, [[electrolyte]]s, and ...

...ique used to analyze [[resistivity]] versus depth in [[semiconductor]]s. [[Semiconductor device]]s depend on the distribution of carriers ([[electron]]s or [[electr ...en challenged by the ever-shrinking dimensions of state-of-the-art digital devices. For shallow structures (<1&nbsp;um deep), the data reduction is complex. S ...

...ric tunnel junctions are being developed as a memristive component for the semiconductor industry. As of early 2024, FTJ based technologies are not commercially ava ...le fabrication temperatures, rendering FTJs especially interesting for the semiconductor industry.<ref name="c" /> ...

...of transistor. Even though its structure is very similar to a metal–oxide–semiconductor field-effect transistor ([[MOSFET]]), the fundamental switching mechanism d ...| volume=12 | issue=2 |pages=66–76 | journal=IEEE Transactions on Electron Devices |doi=10.1109/T-ED.1965.15455|bibcode=1965ITED...12...66H }}</ref> Joerg App ...

{{Short description|How semiconductor lasers work}} ...be solved by development of appropriate theoretical models to describe the semiconductor optical gain and by comparison of the predictions of these models with expe ...

...parked the [[computer]] revolution in the second half of the 20th century. Devices such as the [[diode]], the [[transistor]], the [[Photoelectric sensor|photo ...onductor work function; <math>\chi_s </math>, the electron affinity of the semiconductor.]] ...

...ryi">{{cite journal|author=Serge Luryi|date=1988|title=Quantum capacitance devices|url=http://www.ece.sunysb.edu/~serge/63.pdf|journal=Applied Physics Letters ...of-states systems, such as a [[2DEG|2-dimensional electronic system]] in a semiconductor surface or interface or [[graphene]], and can be used to construct an exper ...

In [[semiconductors]], the [[band gap]] of a [[semiconductor]] can be of two basic types, a '''direct band gap''' or an '''indirect band ...age:Indirect Bandgap.svg|thumb|350px|Energy vs. [[crystal momentum]] for a semiconductor with an indirect band gap, showing that an electron cannot shift from the ...