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In [[Semiconductor device fabrication|semiconductor manufacturing]], '''virtual metrology''' refers to methods to predict the p ...lao|first5=Giuseppe|date=2015-01-01|title=Multi-step virtual metrology for semiconductor manufacturing: A multilevel and regularization methods-based approach|journ ...

...<ref name="M">{{cite book|title=Integrated Circuits: Design Principles and Fabrication|editor1=Raymond M. Warner Jr.|editor2=James N. Fordemwalt|pages=220–223|dat *[[Multigate device]], other multi-gate devices ...

...ric tunnel junctions are being developed as a memristive component for the semiconductor industry. As of early 2024, FTJ based technologies are not commercially ava ...le fabrication temperatures, rendering FTJs especially interesting for the semiconductor industry.<ref name="c" /> ...

...nalyze [[resistivity]] versus depth in [[semiconductor]]s. [[Semiconductor device]]s depend on the distribution of carriers ([[electron]]s or [[electron hole ...pl. Phys. '''53''', 1499 (1982)</ref> Albers,<ref>J. H. Albers, ''Emerging Semiconductor Technology'', ASTM ATP 960, D. C. Gupta and P. H. Langer, Eds., Am. Soc. fo ...

...onductor tunnel junction''' ('''SIS''') – is an [[electronics|electronic]] device consisting of two [[superconductors]] separated by a very thin layer of [[I == Device fabrication == ...

...687}}</ref> The technique studies the transient [[photoconductivity]] of a semiconductor sample during or after it is illuminated by a light pulse. Electron–hole pa ...rary.wiley.com/doi/10.1002/0471749095.ch7 |work=Semiconductor Material and Device Characterization |pages=389–464 |access-date=2023-03-19 |place=Hoboken, NJ, ...

...ate=2024-07-17 |title=Electromigrated Gold Nanogap Tunnel Junction Arrays: Fabrication and Electrical Behavior in Liquid and Gaseous Media |journal=ACS Applied Ma [[Category:Semiconductor device defects]] ...

...ion ( IR ) striking the sensor produces a change in the temperature of the device that as a consequence generates an electric output signal proportional to t == Fabrication process == ...

...technique has been extended to [[Boron group|III]]–[[Nitrogen group|V]] [[semiconductor]]s, [[silicon carbide]], [[metal]]s such as [[titanium]], tantalum, [[alumi ...ted during the Local Oxidation process with the very same tip used for its fabrication. ...

...tion for localized detection, facile integration with standard wafer-scale semiconductor processing and label-free, real-time detection in a nondestructive manner [ ...ease of on-chip integration of device arrays and the cost-effective device fabrication, the surface ultrasensitivity of FET-based biosensors makes it an attractiv ...

...]] and [[Xenon difluoride]] to release the free standing components of the device. ...of [[Isotropy|isotropic]] wet etch processes traditionally used in micro fabrication suffer from stiction, the permanent adherence of the free standing structur ...

...ic]] material, they can change the charge distribution of the underlying [[semiconductor]] material resulting in a change in conductance of the FET channel.<ref nam ...[[ion-sensitive field-effect transistor]] (ISFET), a type of [[metal–oxide–semiconductor field-effect transistor]] (MOSFET) where the [[metal gate]] is replaced by ...

...eat dissipation of an in-plane gate (IPG) transistor to study hot spots in semiconductor devices,<ref name="Bolte"/> and thin-film alloy like cobalt-nickel silicide ...vias studied by scanning Joule expansion microscopy|journal=IEEE Electron Device Letters|volume=21|pages=224–226|year=2000|doi=10.1109/55.841303}}</ref> ...

...[Semiconductor memory|MOS memory]], which consists of [[MOSFET|metal–oxide–semiconductor]] (MOS) memory cells. Modern [[random-access memory]] (RAM) uses [[MOSFET|M ...r junction transistor|bipolar]], [[MOSFET|MOS]], and other [[semiconductor device]]s. It can also be built from [[Magnetism|magnetic]] material such as [[Fer ...

...d water. The actual procedure needs to be adapted to every application and device because of usually existing interconnects and metallization systems on the This technique is usable for the fabrication of multi wafer micro structures, i.e. accelerometers, micro valves and micr ...

...sition]] technique used for the [[epitaxy|epitaxial]] deposition of thin [[semiconductor]] ([[silicon]], [[germanium]] and [[Silicon-germanium|SiGe alloys]]) films. [[Category:Semiconductor device fabrication]] ...

..., so a very tiny optical antenna requires a challenging [[nanotechnology]] fabrication process. A third challenge is that, being very small, an optical antenna ty ...Marks's device showed substantial improvements in efficiency over Bailey's device.<ref name = "Lin">{{Cite journal | last = Lin | first = Guang H. | author2 ...

...e = 20| pages = 6298–6303 | doi=10.1021/la010429j}}</ref> As an analogy to semiconductor devices, the mechanism to control charge carrier transport in electronic de This concept is an analogy to the structure of a metal-oxide semiconductor [[field-effect transistor]] (MOSFET) in electronic circuits. Similar to a M ...

...mits can be overcome to some extent and facilitate further scaling down of device dimensions by modifying the channel material in the traditional bulk MOSFET ...e CNTFET should switch reliably using much less power than a silicon-based device.<ref>{{cite journal | last1 = Collins | first1 = P.G. | last2 = Avouris | f ...

...much lower than those typically achieved in [[Two-dimensional electron gas|semiconductor two-dimensional electron gases]]. For such low densities the electron syste ...ransport_on_the_surface_of_liquid_helium.jpg|thumb|320x320px|a) Split-gate device for electrons on helium used to measure single electron transport. Surface ...