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...687}}</ref> The technique studies the transient [[photoconductivity]] of a semiconductor sample during or after it is illuminated by a light pulse. Electron–hole pa ...rary.wiley.com/doi/10.1002/0471749095.ch7 |work=Semiconductor Material and Device Characterization |pages=389–464 |access-date=2023-03-19 |place=Hoboken, NJ, ...

[[Category:Semiconductor device defects]] ...

...onductor tunnel junction''' ('''SIS''') – is an [[electronics|electronic]] device consisting of two [[superconductors]] separated by a very thin layer of [[I == Device fabrication == ...

...100020570|bibcode=1938PCPS...34..568M |s2cid=222602877 }}</ref> The use of semiconductor junctions sparked the [[computer]] revolution in the second half of the 20t ...onductor work function; <math>\chi_s </math>, the electron affinity of the semiconductor.]] ...

{{Short description|Semiconductor diode based upon the p–n junction}} {{See also|p–n junction|Diode#Semiconductor diodes}} ...

...ut experiencing [[Carrier scattering|scattering]] due to impurities, local defects or lattice vibrations. As a result, the electrons encounter no resistance a When the size of the CNT device scales with the electron coherence length, important in the ballistic condu ...

...d into electric current when the photons strike a suitable [[semiconductor device]]. The theoretical studies are of practical use because they predict the fu When a [[photon]] hits a piece of semiconductor, one of three things can happen: ...

...eat dissipation of an in-plane gate (IPG) transistor to study hot spots in semiconductor devices,<ref name="Bolte"/> and thin-film alloy like cobalt-nickel silicide ...vias studied by scanning Joule expansion microscopy|journal=IEEE Electron Device Letters|volume=21|pages=224–226|year=2000|doi=10.1109/55.841303}}</ref> ...

...icroscopy''' is a technique where a [[superconducting quantum interference device]] (SQUID) is used to image surface [[magnetic field]] strength with [[micro ...ub>2</sub>Cu₃O₇ superconducting quantum interference device ...

...wn as '''Frenkel–Poole emission'''<ref name="Sze">Sze, S. M., ''Physics of Semiconductor Devices'', 2nd edition, Section 4.3.4.</ref>) is a model describing the mec ...[[electrical conductivity]] <math>\sigma </math> of [[dielectrics]] and [[semiconductor]]s in presence of high electric fields (more than <math>10^5 V/cm</math> fo ...

...tions and time.<ref>JEDEC JEP148, April 2004, Reliability Qualification of Semiconductor Devices Based on Physics of Failure Risk and Opportunity Assessment</ref> ...model for device degradation due to Hot-Carrier Injection", IEEE Electron Device Letters, Vol 4, Num 4, 1983, pp. 111–113.</ref> ...

{\scriptstyle (h\nu \text{: photon energy, SC: semiconductor,} e-_{cb}\text{: electron in conduction band,} h+_{vb}\text{: hole in valen ...ast1=Fujishima|first1=Akira|title=Electrochemical Photolysis of Water at a Semiconductor Electrode|journal=Nature|date=13 September 1971|volume=238|issue=5358|pages ...

...}}</ref> can also emit single photons and can be constructed from the same semiconductor materials as the light-confining structures. It is noted that the single ph ...rnal|author=Birowosuto, M.|title=Movable high-Q nanoresonators realized by semiconductor nanowires on a Si photonic crystal platform |journal=Nature Materials|volum ...

...talline solar cell. The transparent conducting coating contacts the n-type semiconductor to draw current.]] ...-doped anatase TiO₂ thin films | journal = Materials Science in Semiconductor Processing | volume = 134 | pages = 106048 | doi = 10.1016/j.mssp.2021.1060 ...

...inders. Depending on the direction on which they are rolled, CNTs can be [[Semiconductor|semiconducting]] or metallic. Metallic carbon nanotubes have been identifie ...1M }}</ref> The local temperature rise due to current crowding across such defects is typically unknown. Since the underlying processes are typically thermall ...

...s of Layers of MOS Nonvolatile Memory Devices|journal=IEEE Transactions on Device and Materials Reliability|volume=9|issue=4|pages=529–536|doi=10.1109/TDMR.2 ...bserved by Conductive Atomic Force Microscopy|journal=IEEE Transactions on Device and Materials Reliability|volume=7|issue=2|pages=351–355|doi=10.1109/TDMR.2 ...

...ubner Verlag, 2010, {{ISBN|978-3-8351-0228-6}}</ref> e.g. for the study of semiconductor materials, intermetallic compounds, surfaces and interfaces, and a number o ...ISOLDE Schema.png|thumb|upright=1.5|Schema of '''Isotope Separator On Line DEvice'''' ([[ISOLDE]]) am [[CERN]]. The proton beam of the [[proton synchrotron|p ...

...librated voltage across the electrodes of the winding so that any existing defects will be "burned away" (see also "self-healing" below). ...d to produce capacitor "dice" for [[surface-mount technology|Surface Mount Device]] (SMD) packaged components. ...

*'''[[Accelerometer]]''' – is a device that measures [[proper acceleration]].<ref name="Tinder">{{cite book |title *'''[[Agitator (device)]]''' – a [[machine|device]] or [[Mechanism (engineering)|mechanism]] to put something into [[Motion ( ...

...oduced a sound during the "dots" and "dashes".<ref name="Phillips1" /> The device which did this was called a "''[[detector (radio)|detector]]''". Since ther *An indicating device such as an ''[[earphone]]'', which converted the pulses of current into sou ...