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- ...ximately [[Dennard scaling]] of [[MOSFET|metal-oxide-semiconductor FET]]s (MOSFETs), the capacitance per unit area has increased inversely with device dimensi ...2 KB (362 words) - 22:36, 21 May 2024
- 3 KB (439 words) - 21:30, 11 September 2023
- ...<ref>{{cite thesis |last1=Lin |first1=Jianqiang |title=InGaAs Quantum-Well MOSFETs for logic applications |date=2015 |publisher=[[Massachusetts Institute of T ...ng of three terminals, the source (or input), drain (or output), and gate, MOSFETs can control current flow via an applied voltage (or lack thereof) to the ga ...17 KB (2,467 words) - 15:52, 4 January 2025
- ...ead of modulating [[thermionic emission]] over a barrier as in traditional MOSFETs. Because of this, TFETs are not limited by the thermal [[Maxwell–Boltzmann ...icant power savings can be obtained by using low-voltage TFETs in place of MOSFETs in logic circuits.<ref name="seabaugh2010">{{Cite journal | last1 = Seabaug ...10 KB (1,360 words) - 06:14, 31 July 2024
- ...MOSFET amplifier''', which uses [[MOSFET|metal–oxide–semiconductor FETs]] (MOSFETs). The main advantage of a FET used for amplification is that it has very hi [[Category:MOSFETs]] ...8 KB (1,137 words) - 04:09, 29 September 2024
- ...ffect transistors) as opposite to [[bipolar junction transistors]] (BJTs). MOSFETs are simpler to fabricate and therefore less expensive than BJT [[amplifiers [[Category:MOSFETs]] ...19 KB (2,705 words) - 16:18, 4 October 2024
- [[Category:MOSFETs]] ...13 KB (1,861 words) - 13:33, 27 January 2025
- ...random-access memory]] (RAM) uses [[MOSFET|MOS field-effect transistors]] (MOSFETs) as flip-flops, along with [[MOSFET#MOS capacitor|MOS capacitor]]s for cert ...[[flip-flop (electronics)|flip-flop]] circuit, typically implemented using MOSFETs. These require very low power to maintain the stored value when not being a ...28 KB (4,011 words) - 04:14, 29 September 2024
- ...ng losses|de|Schaltverluste}} on the [[Power semiconductor device#Switches|MOSFETs]] used. ...9 KB (1,235 words) - 18:27, 8 June 2024
- 9 KB (1,308 words) - 00:46, 28 May 2023
- ...1(94)00152-6 PDF]</ref> in the spectroscopic investigations of the silicon MOSFETs. ...94)<ref name =Yakym1 /> in the spectroscopic investigations of the silicon MOSFETs. ...31 KB (4,924 words) - 23:22, 11 December 2024
- ==Comparison to MOSFETs== ...s.<ref name="park3" /> About twice higher carrier velocity of CNTFETs than MOSFETs comes from the increased mobility and the band structure. CNTFETs, in addit ...36 KB (5,341 words) - 03:32, 6 April 2024
- ...code=1962NYASA.102...29C |s2cid=33342483 |issn=1749-6632}}</ref> Biosensor MOSFETs (BioFETs) were later developed, and they have since been widely used to mea [[Category:MOSFETs]] ...25 KB (3,359 words) - 21:52, 22 November 2024
- ...istor|transistors]], [[Insulated-gate_bipolar_transistor|IGBTs]], [[MOSFET|MOSFETs]], [[Diode|diodes]], etc. are all non-linear loads. Further examples of non ...25 KB (3,878 words) - 10:52, 27 November 2024
- ...ectron Devices Meeting |chapter=Extreme scaling with ultra-thin Si channel MOSFETs |date=December 2002 |pages=267–270 |doi=10.1109/IEDM.2002.1175829|isbn=0-78 ...50 KB (6,853 words) - 05:04, 12 January 2025
- .... | title=HEXFET Designer's Manual Volume I | chapter=AN-970: HEXFET Power MOSFETs in Low Dropout Linear Post-Regulators | date=1993 | publisher=[[Internation ...33 KB (4,808 words) - 01:28, 30 January 2025
- ...[transistor]] [[Memory cell (computing)|memory cell]], typically using six MOSFETs. This form of RAM is more expensive to produce, but is generally faster and ...58 KB (8,028 words) - 07:06, 15 February 2025
- ...title=Polarity-dependent dielectric breakdown-induced epitaxy (DBIE) in Si MOSFETs|journal=IEEE Electron Device Letters|volume=23|issue=9|pages=526–528|doi=10 ...49 KB (7,183 words) - 16:18, 28 February 2025
- {{defn|Complementary metal–oxide–semiconductor, a fabrication process for MOSFETs and integrated circuits}} ...you count those built into integrated circuits, nearly all transistors are MOSFETs.}} ...148 KB (21,331 words) - 12:18, 11 November 2024