Search results

...h drain, [[Field-effect transistor#Basic information|source]], and [[Field-effect transistor#More about terminals|bulk]] voltages fixed will exhibit approxim ...erformance and low-power CMOS technology featuring fully-depleted tri-gate transistors, self-aligned contacts and high density MIM capacitors | title = 2012 Sympo ...

{{Short description|Capacitance of the gate terminal of a field-effect transistor}} ...rcuit]] technology, or as the capacitance per unit width of minimum-length transistors in a technology. ...

The term is often used when describing [[field effect transistor]]s, which rely on an electrically insulating pad of material bet ...

...though its structure is very similar to a metal–oxide–semiconductor field-effect transistor ([[MOSFET]]), the fundamental switching mechanism differs, makin ...irst2 = Q. | doi = 10.1109/JPROC.2010.2070470 | title = Low-Voltage Tunnel Transistors for Beyond CMOS Logic | journal = Proceedings of the IEEE | volume = 98 | i ...

...Changxin, and Yafei Zhang. "Nanowelded Carbon Nanotubes from Field-effect Transistors to Solar Microcells", Heidelberg: Springer, 2009. Print.</ref> Phase coherent electrons give rise to the observed interference effect at low temperatures. Coherence then corresponds to a decrease in the occupa ...

...=Friend|first5=Richard H.|date=12 March 2001|title=Optical spectroscopy of field-induced charge in self-organized high mobility poly(3-hexylthiophene)|journ ...ct current plus alternating current signal is applied to the organic field-effect transistor, the AC will be as the reference frequency for the Lock-in Ampli ...

A '''FET amplifier''' is an [[amplifier]] that uses one or more [[field-effect transistor]]s (FETs). The most common type of FET amplifier is the '''MOSFE {{See|Field-effect transistor|Amplifier}} ...

...e [[CMOS]] (complementary metal–oxide–semiconductor) amplifier circuits, [[transistors]] are not only used to amplify the signal but are also used as [[active loa ...lled [[Moore’s law]], and states that in about each 2 years, the number of transistors doubles for the same silicon area of ICs. Progress in memory circuits desig ...

===Piezoelectric effect=== ...n applied voltage and a simple subtraction can be used to correct for this effect. ...

...' ('''QWFET''') is a type of [[MOSFET]] (metal–oxide–semiconductor [[field-effect transistor]])<ref>{{cite journal |last1=Datta |first1=Kanak |last2=Khosru | .../ch7_6.htm|access-date=2020-11-23|website=ecee.colorado.edu}}</ref> MOSFET transistors consist of dielectric materials, such as SiO₂, and metal gates.< ...

...is a commonly used specification for measuring the performance of [[field effect transistor]]s and [[vacuum tube]]s.<ref name=ML96/> ...

{{Short description|Type of field-effect transistor}} ...iles/6756727/2010JApplPhysMaddalena.pdf}}</ref> or '''BioFET'''), '''field-effect biosensor''' ('''FEB'''),<ref name="GoldsmithLocascio2019">{{cite journal|l ...

...logy]] aiming for control of [[fluid]]s in [[nanometer]] scale. Due to the effect of an [[electrical double layer]] within the fluid channel, the behavior of ...Transport through Nanoporous Membranes by Control of Electrokinetic Flow: Effect of Surface Charge Density and Debye Length | journal = Langmuir | volume = ...

.... |author7= Grigorieva, I. V. |author8=Firsov, A.A. |title= Electric Field Effect in Atomically Thin Carbon Film |year=2004 |journal= Science |volume=306 |is ...predicted that a bandgap could be introduced if an electric displacement field were applied to the two layers: a so-called tunable [[band gap]].<ref name= ...

...ells. Modern [[random-access memory]] (RAM) uses [[MOSFET|MOS field-effect transistors]] (MOSFETs) as flip-flops, along with [[MOSFET#MOS capacitor|MOS capacitor] ...utilize floating-gate memory cells, which rely on [[floating-gate MOSFET]] transistors. ...

...ces, including [[ferroelectric capacitor]]s (FeCAP), [[ferroelectric field-effect transistor]]s (FeFET), [[ferroelectric random-access memory]] (FeRAM)<ref n ...This results in a [[hysteresis effect]] seen in the polarization-electric field (PE) curve.<ref name="d">{{cite web |title=Ferroelectric Materials (all con ...

...nuator]] rather than an [[amplifier]]; it employed a [[JFET|junction field-effect transistor]] in [[JFET#Linear ohmic region|voltage-controlled resistance]] ...yler|Kirkwood|2008|p=344}} To ensure isothermal operation, these metal-can transistors were firmly held together with a thermally conductive ceramic block and ins ...

{{Short description|Field-effect transistor made from carbon nanotubes}} ...ffect%20transistors/Single-%20and%20multi-wall%20carbon%20nanotube%20field-effect%20transistors_Martel_APL.pdf |journal=Applied Physics Letters |volume=73|pa ...

...378-4754}}</ref> to approximate current-voltage characteristics of [[field-effect transistor]]s and [[light-emitting diode]]s,<ref name="Tuev-Uzhanin_2009"/> ...unction to approximate the current-voltage characteristics of field-effect transistors |author-first1=Vasily I.<!-- В. И. --> |author-last1=Tuev<!-- Туев --> |aut ...

...lied a liquid meniscus between tip and sample is induced by the electrical field. This liquid meniscus acts like a nanometer-size electrochemical cell where ...le=Patterning of silicon surfaces with noncontact atomic force microscopy: Field-induced formation of nanometer-size water bridges |journal=[[Journal of App ...