Search results
Jump to navigation
Jump to search
- ...ing rectifying junctions include [[p–n diode]]s, [[Schottky diode]]s and [[bipolar junction transistor]]s. ...1 KB (169 words) - 18:43, 22 October 2023
- ...e. The resultant current gain is the product of those of the two component transistors: ...3 KB (497 words) - 17:22, 20 September 2023
- ...uld be zero. However, due to manufacturing process, the differential input transistors of real op-amps may not be exactly matched. This causes the output to be ze ...tend to have lower input bias currents than [[bipolar junction transistor|bipolar]]-input op-amps, and hence incur less offset of this type. ...3 KB (508 words) - 04:50, 1 December 2023
- ...ells. Modern [[random-access memory]] (RAM) uses [[MOSFET|MOS field-effect transistors]] (MOSFETs) as flip-flops, along with [[MOSFET#MOS capacitor|MOS capacitor] ...utilize floating-gate memory cells, which rely on [[floating-gate MOSFET]] transistors. ...28 KB (4,011 words) - 04:14, 29 September 2024
- ...urces are useful, for example, in modeling the behavior of amplifiers. A [[bipolar junction transistor]] can be modeled as a dependent current source whose ma ...5 KB (677 words) - 08:28, 8 January 2025
- ...t2=Yukiko | last3=Shirono | first3=Katsuhiro | title=Nanofluidic Diode and Bipolar Transistor | journal=Nano Letters | publisher=American Chemical Society (AC ===Field-effect transistors=== ...29 KB (4,089 words) - 22:13, 23 July 2024
- ...on which terminal is the common input and output. (This is similar to a [[bipolar junction transistor]] (BJT) amplifier.) ...using masking and predeposition, were able to manufacture silicon dioxide transistors and showed that silicon dioxide insulated, protected silicon wafers and pre ...8 KB (1,137 words) - 04:09, 29 September 2024
- ...e [[CMOS]] (complementary metal–oxide–semiconductor) amplifier circuits, [[transistors]] are not only used to amplify the signal but are also used as [[active loa ...lled [[Moore’s law]], and states that in about each 2 years, the number of transistors doubles for the same silicon area of ICs. Progress in memory circuits desig ...19 KB (2,705 words) - 16:18, 4 October 2024
- ...lackmer's application of push-pull signal processing allowed modulation of bipolar voltages and bidirectional currents. ...yler|Kirkwood|2008|p=344}} To ensure isothermal operation, these metal-can transistors were firmly held together with a thermally conductive ceramic block and ins ...31 KB (4,511 words) - 00:47, 7 September 2024
- ...onfiguration.{{sfn|Adams|2006|p=xiv}} Diode symbols denote diode-connected transistors; diodes proper have inferior logarithming characteristics and are avoided i ...ters]] employing [[exponent]]ial [[current-voltage characteristic]] of a [[bipolar transistor]].{{sfn|Adams|2006|p=xii}} [[True_RMS_converter#Thermal_converte ...8 KB (1,091 words) - 19:48, 11 April 2021
- ...ansistor]]s. While it offered higher speeds than [[magnetic-core memory]], bipolar DRAM could not compete with the lower price of the then-dominant magnetic-c ...conductor memory]] appeared in the 1960s with bipolar memory, which used [[bipolar transistor]]s. Although it was faster, it could not compete with the lower ...58 KB (8,028 words) - 07:06, 15 February 2025
- ...ntrol power transistors directly; combinations of the TL431 with power MOS transistors are used in high efficiency, very low dropout linear regulators. The TL431 The TL431 is functionally equivalent to an ideal [[NPN transistor|npn bipolar transistor]] [[Electronic switch|switch]] with a stable 2.495 V switch ...33 KB (4,808 words) - 01:28, 30 January 2025
- ...reference 14-302.</ref> use [[transistor]]s, usually the [[Insulated-gate bipolar transistor]] (IGBT). ...onverters are provided at each end of the scheme, which is of conventional bipolar construction.<ref name=Davidson/> Since 2007 the highest voltage rating of ...46 KB (6,909 words) - 21:22, 22 January 2025
- ...switching bipolar and field effect transistors and insulated-gate bipolar transistors (IGBT).}}{{efn|Two or more electronic valve devices may be integrated on a ...55 KB (7,970 words) - 22:19, 26 February 2025
- ...skin-invert-image|thumb|right|200px|A transparent latch circuit based on [[bipolar junction transistor]]s]] ...und a single pair of cross-coupled inverting elements: [[vacuum tube]]s, [[bipolar transistor]]s, [[field-effect transistor]]s, [[inverter (logic gate)|invert ...57 KB (8,881 words) - 18:46, 25 February 2025
- ...e]]s, [[avalanche diode]]s, [[unijunction transistor]]s, p-n-p and n-p-n [[bipolar transistor]]s, [[field effect transistor]]s or their combinations.{{r|TSRAO ...38 KB (5,577 words) - 04:14, 28 February 2025
- {{term|[[bipolar junction transistor]]}} {{defn|An interconnection of two transistors to provide a gain that is the product of the individual gains.}} ...148 KB (21,331 words) - 12:18, 11 November 2024
- ...nsulated Gate Bipolar Transistor|IGBT]]s and [[Bipolar junction transistor|bipolar transistor]]s. Snubber capacitors (or higher power "damping capacitors") re ...116 KB (16,371 words) - 15:03, 15 October 2024
- ...l from the tuned circuit is passed through one or more amplifying tubes or transistors, [[demodulation|demodulated]] in a [[detector (radio)|detector]], then the ...quiring several large batteries to produce the filament and plate voltage. Transistors did not require a heated filament, reducing power consumption, and were sma ...105 KB (14,930 words) - 18:29, 13 February 2025