File:Rtd seq v3.gif

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Rtd_seq_v3.gif (453 × 362 pixels, file size: 73 KB, MIME type: image/gif, looped, 40 frames, 10 s)

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Summary

Description
English: A working mechanism of a Resonant Tunneling Diode device and negative differential resistance in output characteristic. Notice the negative resistance characteristic after the first current peak due to reduction of first energy level below source fermi level with gate bias.
Date
Source Tool:Resonant Tunneling Diode Simulation with NEGF simulator on www.nanoHUB.org. Link: http://nanohub.org/resources/8799
Author Saumitra R Mehrotra & Gerhard Klimeck
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1 February 2010

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Date/TimeThumbnailDimensionsUserComment
current17:23, 30 September 2023Thumbnail for version as of 17:23, 30 September 2023453 × 362 (73 KB)wikimediacommons>BeaoRemoved watermark

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