File:N-V charge control PL maps.jpg
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Original file (2,046 × 3,629 pixels, file size: 1.84 MB, MIME type: image/jpeg)
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Summary
| Description | Top: Schematic figure of an in-plane Al Schottky diode on H-terminated diamond surface. A confocal μPL measurement was performed at the edge of the Al contact (green spot) to investigate the bias-voltage dependent variation of NV emission in the depletion region. Bottom: A PL-intensity mapping performed on the diamond surface at the edge of the Al-Schottky-contact (rectangle area on the left with lower PL intensity). Compared to the zero-potential condition (a) there are bright spots visible at the edge of the Al-contact (b) upon applying a reverse bias potential of +20 V indicating NV− photoluminescence in the hole depletion region of the Schottky junction. |
| Date | |
| Source | http://www.nature.com/articles/srep12160 |
| Author | C. Schreyvogel, V. Polyakov, R. Wunderlich, J. Meijer & C. E. Nebel |
| Permission (Reusing this file) |
  This file is licensed under the Creative Commons Attribution 4.0 International license.
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| Date/Time | Thumbnail | Dimensions | User | Comment | |
|---|---|---|---|---|---|
| current | 08:45, 15 March 2017 | | 2,046 × 3,629 (1.84 MB) | wikimediacommons>Materialscientist | =={{int:filedesc}}== {{Information |description=Top: Schematic figure of an in-plane Al Schottky diode on H-terminated diamond surface. A confocal μPL measurement was performed at the edge of the Al contact (green spot) to investigate the bias-voltage... |
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