File:Microstrip-bandpass-filter.jpg
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Size of this preview: 800 × 334 pixels. Other resolutions: 320 × 133 pixels | 1,132 × 472 pixels.
Original file (1,132 × 472 pixels, file size: 130 KB, MIME type: image/jpeg)
Summary
| Description |
Deutsch: Bandpassfilter mit Mikrostreifenleitern, der seitlich gekoppelte λ/2-Resonatoren verwendet. Die metallisierten Bohrungen an jeder Seite sind nicht Teil der Filterstruktur, sondern Teil des Gehäuses und dienen der Verbesserung der Isolation. Die Substratdicke beträgt ungefähr 0,5 mm und die Dicke der Metallisierung vielleicht 20 µm. Die Bandbreite liegt am unteren Ende des Ku-Bandes, deshalb muss die Dieelektrizitätskonstante des Substrates bei ca. 3,5 liegen. Für den Maßstab: Das Raster der Gehäuse-Bohrungen liegt genau bei 1 mm.
English: Bandpass filter in microstrip using edge-coupled halfwave resonators. The via fences on each side are not part of the filter, but form part of the enclosure. The substrate thickness is about 0.5mm, and the metallization thickness perhaps 20μm. The pass band is at the bottom of the Ku band, so the substrate dielectric constant must be about 3.5. For scale: the pitch of the via fences is precisely 1mm. |
| Date | |
| Source | Own work |
| Author | Catslash |
Licensing
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I, the copyright holder of this work, release this work into the public domain. This applies worldwide. In some countries this may not be legally possible; if so: I grant anyone the right to use this work for any purpose, without any conditions, unless such conditions are required by law. |
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| Date/Time | Thumbnail | Dimensions | User | Comment | |
|---|---|---|---|---|---|
| current | 17:15, 29 April 2010 | | 1,132 × 472 (130 KB) | wikimediacommons>Catslash | {{Information |Description={{en|1=Bandpass filter in microstrip using edge-coupled halfwave resonators. The via fences on each side are not part of the filter, but form part of the enclosure. The substrate thickness is about 0.5mm, and the metallization t |
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