File:LEEM graphene layer number counting.png
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Size of this preview: 315 × 599 pixels. Other resolutions: 126 × 240 pixels | 536 × 1,020 pixels.
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Summary
| Description |
English: LEEM images of 4H-SiC(0001) surfaces after anneal-ing at 1450◦C. The incident electron beam energies are (a) 2.5, (b) 3.5, (c) 4.5, and (d) 5.5 eV and reflectivity data obtained from areas A-H plotted as a function of the incident electron beam energy. The reflectivity curves from areas A-H are successively shifted upward for clarity. |
| Date | |
| Source | Hibino, H., et al. "Thickness determination of graphene layers formed on SiC using low-energy electron microscopy." e-Journal of Surface Science and Nanotechnology 6 (2008): 107-110. https://doi.org/10.1380/ejssnt.2008.107 |
| Author | H. Hibino, H. Kageshima, F. Maeda, M. Nagase, Y. Kobayashi, Y. Kobayashi, H. Yamaguchi |
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| Date/Time | Thumbnail | Dimensions | User | Comment | |
|---|---|---|---|---|---|
| current | 17:36, 25 January 2020 | | 536 × 1,020 (237 KB) | wikimediacommons>TobiasdeJong | User created page with UploadWizard |
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