File:Graphene - Geim - ambipolar FET.svg
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Summary
| Description |
English: When the gate voltage in a field effect graphene device is changed from positive to negative, conduction switches from electrons to holes. The charge carrier concentration is proportional to the applied voltage. Graphene is neutral at zero gate voltage and resistivity is at its maximum because of the dearth of charge carriers. The rapid fall of resistivity when carriers are injected shows their high mobility, here of the order of 5000 cm²/Vs. (n-Si/SiO₂ substrate, T=1K) After Geim and Novoselov arXiv:cond-mat/0702595 |
| Date | |
| Source | Own work |
| Author | Ponor |
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| Date/Time | Thumbnail | Dimensions | User | Comment | |
|---|---|---|---|---|---|
| current | 17:51, 25 July 2020 | | 209 × 210 (41 KB) | wikimediacommons>Ponor | Cross-wiki upload from en.wikipedia.org |
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