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- ...f Si aims to quantify the different Si fluxes in the global biogeochemical silicon cycle, to understand the role of [[biogenic silica]] within the global Si c ...MG...82..289P |issn=1529-6466}}</ref> There are three stable [[Isotopes of silicon|isotopes of Si]], associated with the following mean natural abundances: <s ...23 KB (3,173 words) - 00:03, 6 January 2024
- {{Short description|Any binary chemical compound containing just silicon and another chemical element}} ...ramme binaire Fe Si analyse thermique 30.svg|frame|right|Experimental iron-silicon phase diagram]] ...58 KB (7,758 words) - 23:03, 27 September 2024
- ...ting of a [[fast-ion conductor|solid electrolyte]], solid [[cathode]], and silicon-based solid [[anode]].<ref name=":0" /><ref name=":2">{{Cite journal|last=M ...t11=Scharf|first11=Jonathan|date=2021-09-24|title=Carbon-free high-loading silicon anodes enabled by sulfide solid electrolytes|url=https://www.science.org/do ...8 KB (1,100 words) - 00:35, 12 January 2025
- '''Epitaxial graphene growth on [[silicon carbide|silicon carbide (SiC)]]''' by [[thermal decomposition]] is a method to produce larg ...cially available.<ref name="Hib10">{{cite journal|title=Graphene Growth on Silicon Carbide|year=2010|journal=NTT Technical Review|volume=8|issue=8|last1=Hibin ...25 KB (3,644 words) - 19:41, 18 February 2025
Page text matches
- ...de thickness''' usually given in [[nanometer]]s (nm) is the thickness of [[silicon oxide]] film that provides the same electrical performance as that of a [[h ...achieving the same [[capacitance]] and high performance. In other words [[silicon oxide]] film of one-tenth the thickness of the [[high-κ dielectric|high-κ]] ...2 KB (277 words) - 19:28, 28 February 2021
- ...k">{{GoldBookRef|title=silanols|file=S05664}}</ref> Organosilanols are the silicon [[Analog (chemistry)|analogs]] to [[alcohol (chemistry)|alcohol]]s. Silanol ...s. This can be explained by a stronger increase in electron density on the silicon atom by the alkyl groups. Correspondingly, the reaction rate of the tri-''n ...4 KB (507 words) - 17:50, 22 June 2023
- ...silyl]] groups, and can be synthesized via high-temperature oxidation of [[silicon tetrachloride]]: <chem display=block>2SiCl4{} + O2 ->[\atop{950-970\,^\circ ...it is a colorless liquid that hydrolyzes upon exposure to water to give [[silicon dioxide]] and [[hydrochloric acid]]: <chem display=block>(SiCl3)2O + 3H2O - ...3 KB (299 words) - 15:23, 22 June 2023
- ...at is, ignoring fringing fields and other details) for a [[Silicon dioxide|silicon-dioxide]]-insulated gate can be calculated from thin-oxide capacitance per ...th|1=''ε''{{sub|SiO{{sub|2}}}} = 3.9}} is the [[relative permittivity]] of silicon dioxide ...2 KB (362 words) - 22:36, 21 May 2024
- ...nium silicide''' is a binary [[inorganic compound]] of [[neptunium]] and [[silicon]] with the chemical formula {{chem|Np|Si|2}}.<ref name="CD">{{cite book |la Heating [[neptunium trifluoride]] with powdered silicon in vacuum:<ref name="NNC">{{cite book |last1=Sheft |first1=Irving |last2=Fr ...3 KB (414 words) - 12:39, 5 January 2024
- ...nium silicide''' is a binary [[inorganic compound]] of [[plutonium]] and [[silicon]] with the chemical formula PuSi.<ref>{{cite journal |last1=Krikorian |firs Reaction of [[plutonium dioxide]] and [[silicon carbide]]: ...4 KB (433 words) - 12:28, 5 January 2024
- ...ting of a [[fast-ion conductor|solid electrolyte]], solid [[cathode]], and silicon-based solid [[anode]].<ref name=":0" /><ref name=":2">{{Cite journal|last=M ...t11=Scharf|first11=Jonathan|date=2021-09-24|title=Carbon-free high-loading silicon anodes enabled by sulfide solid electrolytes|url=https://www.science.org/do ...8 KB (1,100 words) - 00:35, 12 January 2025
- ...[silicon dioxide]]. On the semiconductor substrate, a thin layer of oxide (silicon dioxide) is applied (by, for example, [[thermal oxidation]], or [[chemical ...3 KB (439 words) - 21:30, 11 September 2023
- {{Short description|Solid polymers of only silicon and hydrogen}} ...sily [[Hydrolysis|hydrolyzed]] and ignite readily in air. The surfaces of silicon prepared by [[MOCVD]] using [[silane]] (SiH<sub>4</sub>) consist of a polys ...8 KB (1,171 words) - 19:37, 26 October 2023
- ...engine/metal-oxide-semiconductor-mos-transistor-demonstrated/ |journal=The Silicon Engine: A Timeline of Semiconductors in Computers |publisher=[[Computer His ...e=1957 |title=Surface Protection and Selective Masking during Diffusion in Silicon |url=https://iopscience.iop.org/article/10.1149/1.2428650 |journal=Journal ...8 KB (1,137 words) - 04:09, 29 September 2024
- ...). This type of waveguide consists of dielectric materials (e.g., glass, [[silicon]], [[indium phosphide]], etc). The core of the waveguide has a higher [[Ref ...220 nm). The waveguide consists of a silicon core (dark gray) on top of a silicon-dioxide layer (light-gray). Marcatili's method is sketched. The four outer ...6 KB (910 words) - 14:01, 20 January 2022
- ...052702303987004579479244213599118|title=There's a New Geek in Town: HBO's 'Silicon Valley'|last1=Jurgensen|first1=John|last2=Rusli|first2=Evelyn M.|date=April [[Category:Silicon Valley (TV series)]] ...5 KB (688 words) - 18:56, 2 August 2024
- ...sordered semiconductors such as [[Amorphous silicon|hydrogenated amorphous silicon]].<ref name=":0">{{Cite book|last=Brotherton|first=S. D.|url=https://www.sp ...6|title=Disorder and the Optical-Absorption Edge of Hydrogenated Amorphous Silicon|url=https://journals.aps.org/prl/pdf/10.1103/PhysRevLett.47.1480|journal=Ph ...8 KB (1,130 words) - 09:12, 26 February 2024
- {{Short description|Radiation damage centre in silicon}} ...opment of integrated quantum devices benefiting from techniques within the silicon photonic community. ...13 KB (1,918 words) - 04:13, 19 February 2024
- ...|A gold and aluminum sputtered solar cell manufactured from a <100> p-type silicon wafer at the Cal Poly San Luis Obispo Microfab clean room.]] ...em. Current engineering has been able to create features on the surface of silicon wafers between 1 and 100 [[μm]].<ref>[[Microelectromechanical systems] ...14 KB (2,044 words) - 08:27, 24 July 2023
- ...sistance is almost exclusively from <math>R{{=}}\frac{\rho}{2a}</math> for silicon samples at least <math>2a</math> thick. With the aid of calibration resisti ...pg|thumb|right| Figure 1 Illustration of the probing of a beveled piece of silicon. (Typically, 60 to 100 or more measurements are made.)|500px]] ...8 KB (1,234 words) - 18:11, 18 March 2024
- ...rogen fluoride and xenon difluorides are used to etch silicon dioxide and silicon sacrificial layers respectively. ...ell|date=1966|title=A vapour etching technique for the photolithography of silicon dioxide|journal=Microelectronics and Reliability|volume=5|issue=4|pages=337 ...11 KB (1,622 words) - 15:27, 22 August 2024
- ...chneider M, Schmid U |date=October 2017|title=Porous single crystalline 4H silicon carbide rugate mirrors |journal=APL Materials|language=en|volume=5|issue=1 ...eflective coating|anti-reflection]] properties similar to those of [[black silicon]]. This reduces the intensity of the secondary maxima.<ref name=":0" /> ...7 KB (1,076 words) - 21:05, 22 November 2023
- ...]] of minority [[charge carrier]]s in a [[semiconductor]], especially in [[silicon]] [[Wafer (electronics)|wafers]].<ref name=":1">{{Cite journal |last1=Biell ...ate=February 1955 |title=Measurement of Carrier Lifetimes in Germanium and Silicon |url=http://aip.scitation.org/doi/10.1063/1.1721958 |journal=Journal of App ...12 KB (1,621 words) - 02:07, 25 July 2023
- ...typically fabricated from [[dielectric material]]s such as [[Teflon]] or [[silicon]]. The geometry consists of a [[sphere#Hemisphere|hemisphere]] of radius {{ ...2 KB (211 words) - 02:13, 16 May 2023